赵宜鹏，男，汉族，中共党员，1993年4月出生于河南省驻马店市。理学物理学博士、新葡的京集团3512vip讲师。

赵宜鹏博士主要研究方向为表面与低维物理，包括二维纳米体系能带结构的应变工程；基于过渡金属硫族化合物的垂直堆垛异质结的光电性能调控；二维体系电子学性质与界面堆垛之间的关系；过渡金属硫族化合物的替代掺杂和尺寸效应等。在SCI期刊以第一作者发表论文5篇。

发表的代表性论文：

(1) Y. P. Zhao, Z. Zhang, G. Ouyang, Lattice Strain Effect on the Band Offset in Single-Layer MoS₂: An Atomic-Bond-Relaxation Approach. J. Phys. Chem. C 2017, 121, 5366-5371.

(2) Y. P. Zhao, W. B. Yu, G. Ouyang, Size-tunable band alignment and optoelectronic properties of transition metal dichalcogenides van der Waals heterostructures. J. Phys. D: Appl. Phys. 2018, 51, 015111.

(3) Y. P. Zhao, Z. Zhang, G. Ouyang, Bandgap engineering of two-dimensional transition-metal dichalcogenide alloys: Size and chemical composition effects. Appl. Phys. A 2018, 124, 292.  

(4) Y. P. Zhao, C. W. Liao, G. Ouyang, Band engineering in twisted molybdenum disulfide bilayers. J. Phys. D: Appl. Phys. 2018, 51, 185101.

(5) C. W. Liao†, Y. P. Zhao†, G. Ouyang, Strain-modulated band engineering in two-dimensional black phosphorus/MoS₂ van der Waals heterojunction. ACS Omega 2018, 3, 14641-14649.